MNEMOSYNE – 128 Mb 3.3 V parallel (3DMN128M08VS1852)
Key Features
Performances
- Density: 128 Mbit
- Supply: 1.8 V (core) and 3.3 V (I/O)
- EEPROM protocol
- On chip latches: address, data, CE_N, OE_N, WE_N
- Access time: 250 ns (max)
- 100,000 P/E cycles
- 20 years data retention
- Hardware reset pin
- Temperature range: -55°C to +125°C
- ITAR free
Space Qualifications
- Up to ESA Class 1,
- Up to NASA Level 1,
- High Longevity and Reliability,
- Flight heritage: 3D PLUS expertise in space memories for more than 20 years
The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.
Radiation Tolerance
- TID > 100 krad(Si)
- SEL LET > 80 MeV.cm²/mg
- SEU LET > 60 MeV.cm²/mg
- SET LET > 60 MeV.cm²/mg
- SEFI LET > 60 MeV.cm²/mg
The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.
Description
3DMN128M08VS1852 is a high performance 128 Mbit Non-Volatile Memory with parallel interface operating at 3.3 V.
Application
- FPGA configuration memory
- Processors boot/program memory
The given information about the MNEMOSYNE — 128 Mb 3.3 V parallel is preliminary. Please contact the MSA-Components Team for further information on this product.
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