FBS-GAM02P-C-PSE
50V Rad Tolerant High Speed Multifunction Power HEMT Driver
- 50V Fully De-Rated Operation internally utilizing 100V Rated eGaN® HEMT technology
- Independent Low and High Side eGaN® HEMT Gate Drivers
- Four Possible Configurations:
- Single Low Side Gate Driver
- Single High Side Gate Driver
- Independent High and Low Side Gate Drivers
- Half-Bridge Gate Drivers With Shoot
- Through Protection
- Internal Shoot-Through Protection
- Internal Power Good Circuitry
- High Speed Switching Capability:1.0+MHz
- Rugged Compact Molded SMT Package
- “Pillar” I/O Pads
- Drives External eGaN® Switching Elements
- No Bipolar Technology
- Commercially Screened
Development Vehicle for:
- FBS-GAM02P-R-PSE
- FBS-GAM02C-R-PSE
Description:
Freebird Semiconductor’s FBS-GAM02P-C-PSE Series Radiation Tolerant High Speed Multifunction Power HEMT Gate Driver Module incorporates eGaN® HEMTs with intended end use design within commercial satellite space environments. These development modules contain two independent high speed gate drive circuits (consisting entirely of eGaN ® switching elements), shoot-through prevention logic (for a Half-Bridge configuration) and +5V gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package. The FBS-GAM02P-C-PSE is intended to drive external Freebird eGaN ® HEMT power switch transistors rated up to 100V (refer to Table
1, Page 11 for device options).
Applications:
- Power Switches/Actuators
- Single and Multi-Phase Motor Phase Drivers
- Commercial Satellite EPS & Avionics
- High Speed DC-DC Conversion
